NVMFD6H852NL Description
NVMFD6H852NL Power MOSFET 80 V, 25.5 mW, 25 A, Dual N−Channel.
NVMFD6H852NL Key Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- NVMFD6H852NLWF
- Wettable Flank Option for Enhanced
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS pliant
- 55 to °C +175
- Steady State
- Steady State (Note 2) RqJA