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NVMFS4841N - Power MOSFET

Features

  • 30V, 7 mW, 89A, Single N.
  • Channel SO8FL.
  • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC.
  • Q101 Qualified These are Pb.
  • Free Devices.
  • http://onsemi. com V(BR)DSS 30 V Value 30 "20 89 63 Unit V V A RDS(ON) MAX 7.0 mW @ 10 V 11.4 mW @ 4.5 V ID MAX 89 A.

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NVMFS4841N Power MOSFET Features 30V, 7 mW, 89A, Single N−Channel SO8FL • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices* http://onsemi.com V(BR)DSS 30 V Value 30 "20 89 63 Unit V V A RDS(ON) MAX 7.0 mW @ 10 V 11.4 mW @ 4.
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