NVMFS6H858NL Datasheet | onsemi

Features - Small Footprint (5x6 mm) for pact Design - Low RDS(on) to Minimize Conduction Losses - Low QG and Capacitance to Minimize Driver Losses - NVMFS6H858NLWF - Wettable Flank Option for Enhanced Optical Inspection - AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are Ro HS pliant MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage VDSS Gate- to- Source Voltage 20 Continuous Drain Current Rq JC (Notes 1, 3) Power Dissipation Rq JC (Note 1) TC = 25C Steady TC = 100C State TC = 25C TC = 100C Continuous Drain Current Rq JA (Notes 1, 2, 3) Power Dissipation Rq JA (Notes 1, 2) TA = 25C Steady TA = 100C State TA = 25C TA = 100C Pulsed Drain Current TA = 25C, tp = 10 ms Operating Junction and Storage Temperature...