Datasheet Summary
MOSFET
- Power, Single N-Channel, STD Gate, SO8-FL
40 V, 0.42 mW, 509 A
Features
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Small Footprint (5x6 mm) with pact Design
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS pliant
Applications
- Motor Drive
- Battery Protection
- Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current
Power Dissipation Pulsed Drain Current Pulsed Source Current (Body Diode)
TC = 25°C TC = 100°C TC = 25°C TA = 25°C, tp =...