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NTS4001N, NVS4001N
MOSFET – Single, N-Channel, Small Signal, SC-70
30 V, 270 mA
Features
• Low Gate Charge for Fast Switching • Small Footprint − 30% Smaller than TSOP−6 • ESD Protected Gate • AEC−Q101 Qualified and PPAP Capable − NVS4001N • These Devices are Pb−Free and are RoHS Compliant
Applications
• Low Side Load Switch • Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC • Buck Converters • Level Shifts
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady TA = 25 °C State
TA = 85 °C Steady TA = 25 °C State
VDSS VGS ID
PD
30
V
±20
V
270 mA
200
330 mW
Pulsed Drain Current
t =10 ms
IDM
800 mA
Operating Junction and Sto
NVS4001NT1G Datasheet
