NVT2023N065M3S - SiC MOSFET

Datasheet Summary

Typ. RDS(on) = 23 mW @ VGS = 18 V.
Low Effective Output Capacitance.
Ultra Low Gate Charge.
100% UIS Tested.
Qualified According to AECQ101.
This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb-Free 2LI (on second level interconnection).

ON Semiconductor

Part number	NVT2023N065M3S
Manufacturer	ON Semiconductor
File Size	175.66 KB
Description	SiC MOSFET
Datasheet	NVT2023N065M3S Datasheet
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Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, T2PAK NVT2023N065M3S Features • Typ.

Published: Oct 27, 2025 |