Datasheet Summary
MOSFET
- Power, Single, N-Channel
40 V, 4.9 mW, 77 A
Features
- Small Footprint (3.3 x 3.3 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- NVTFWS004N04C
- Wettable Flanks Product
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free and are RoHS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
±20
Continuous Drain
Current RqJC (Notes 1, 2, 3, 4)
Steady TC = 25°C
State
TC = 100°C
Power Dissipation RqJC (Notes 1, 2, 3)
TC = 25°C
TC = 100°C
Continuous Drain
Current...