Datasheet Summary
Power MOSFET
30 V, 10.5 mW, 30 A, Single N- Channel
Features
- Small Footprint (3.3x3.3 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- NVTFS4823NWF
- Wettable Flanks Product
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free and are RoHS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
"20 V
Continuous Drain Cur-
Tmb = 25°C
ID rent RYJ- mb (Notes 1, 2, 3, 4)
Steady Tmb = 100°C
Power Dissipation
State Tmb = 25°C
RYJ- mb (Notes 1, 2, 3)
Tmb = 100°C
Continuous...