NVTFS4C25N Datasheet | onsemi

MOSFET - Power, Single N-Channel, m8FL 30 V, 17 m W, 22 A Features - Low RDS(on) to Minimize Conduction Losses - Low Capacitance to Minimize Driver Losses - Optimized Gate Charge to Minimize Switching Losses - NVTFS4C25NWF - Wettable Flanks Product - NVT Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current Rq JA (Notes 1, 3, 5) Power Dissipation Rq JA (Notes 1, 3, 5) Steady State TA = 25°C TA = 85°C TA = 25°C TA = 85°C Continuous Drain Current Ry JC (Notes 1, 2, 4, 5) Power Dissipation Ry JC (Notes 1, 2, 4, 5) Steady State TC = 25°C TC = 85°C TC = 25°C TC = 85°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS...