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MOSFET - Power, Single N-Channel, m8FL
30 V, 17 mW, 22 A
NVTFS4C25N
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVTFS4C25NWF − Wettable Flanks Product • NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Notes 1, 3, 5)
Power Dissipation RqJA (Notes 1, 3, 5)
Steady State
TA = 25°C TA = 85°C TA = 25°C TA = 85°C
Continuous Drain Current RyJC (Notes 1, 2, 4, 5)
NVTFS4C25N Datasheet
