NVTFS6H860N Description
MOSFET - Power, Single, N-Channel 80 V, 21.1 mW, 33 A NVTFS6H860N.
NVTFS6H860N Key Features
- Small Footprint (3.3 x 3.3 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- NVTFS6H860NWF
- Wettable Flanks Product
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS pliant
- Steady State (Note 3)
- Steady State (Note 3)
- Rev. 2