NVTFS6H860N
NVTFS6H860N is N-Channel Power MOSFET manufactured by onsemi.
Features
- Small Footprint (3.3 x 3.3 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- NVTFS6H860NWF
- Wettable Flanks Product
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free and are Ro HS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
±20
Continuous Drain Current Rq JC (Notes 1, 2, 3, 4)
TC = 25°C
Steady TC = 100°C
Power Dissipation
State TC = 25°C
Rq JC (Notes 1, 2, 3)
TC = 100°C
Continuous Drain Current Rq JA (Notes 1, 3, 4)
Power Dissipation Rq JA (Notes 1, 3)
TA = 25°C
Steady TA = 100°C
State TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature...
