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NVTFS8D1N08H - N-Channel Power MOSFET

Features

  • Small Footprint (3x3 mm) for Compact Design.
  • Low RDS(on) to Minimize Conduction Losses.
  • Low QG and Capacitance to Minimize Driver Losses.
  • NVTFWS8D1N08H.
  • Wettable Flank Option for Enhanced Optical Inspection.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com MOSFET - Power, N-Channel, Shielded Gate 80 V, 8.
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