NVTFS8D1N08H Description
MOSFET - Power, N-Channel, Shielded Gate 80 V, 8.3 mW, 61 A NVTFS8D1N08H.
NVTFS8D1N08H Key Features
- Small Footprint (3x3 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- NVTFWS8D1N08H
- Wettable Flank Option for Enhanced Optical
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
- 55 to °C +175
- Rev. 2
- Steady State (Note 4) Junction-to-Ambient