NVTYS013N10MCL
NVTYS013N10MCL is N-Channel MOSFET manufactured by onsemi.
Features
- Small Footprint (3.3 x 3.3 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free and are Ro HS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
±20
Continuous Drain Current Rq JC (Notes 1, 2, 3)
Power Dissipation Rq JC (Notes 1, 2)
TC = 25°C
Steady TC = 100°C
State
TC = 25°C
Continuous Drain Current Rq JA (Notes 1, 2, 3)
Power Dissipation Rq JA (Notes 1, 2)
TA = 25°C
Steady
State
TA = 25°C
11.9 A
Pulsed Drain Current TC = 25°C, tp = 10 ms
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to °C +175
Single Pulse Drain- to- Source Avalanche Energy (IL(pk) = TBD...
