NVTYS014P04M8L
NVTYS014P04M8L is Power MOSFET manufactured by onsemi.
Features
- Small Footprint (3.3 x 3.3 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR- Free and are Ro HS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
- 40
Gate- to- Source Voltage
±20
Continuous Drain Current Rq JC (Notes 1, 2, 4)
Power Dissipation Rq JC (Notes 1, 2)
TC = 25°C
Steady TC = 100°C
State TC = 25°C
TC = 100°C
- 53
- 39
Continuous Drain Current Rq JA (Notes 1, 3, 4)
Power Dissipation Rq JA (Notes 1, 3)
TA = 25°C
- 10.4 A
Steady TA = 100°C
State TA = 25°C
- 7.3
TA =...
