NVVR26A120M1WSB Description
The NVVR26A120M1WSB is part of the VE−Tract B2 SiC family of highly integrated power modules for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application. The module integrates 1200 V SiC MOSFET in a half−bridge configuration. To enhance reliability and thermal performance, sintering technology is applied for die attach.
NVVR26A120M1WSB Key Features
- Ultra Low RDS(on)
- Aluminum Nitride Isolator
- Ultra-low Stray Inductance ~ 7.1 nH
- Tvj.Max = 175°C for Continuous Operation
- Automotive Grade SiC MOSFET Chip Technologies
- Sintered Die Technology for High Reliability Performance
- Automotive Module AQG324 pliant
- PPAP Capable