NVVR26A120M1WSS Description
The NVVR26A120M1WSS is part of the EliteSiC power module for traction inverter, a revolutionary high mobility pound semiconductor product family that offers increased performance, better efficiency, and higher power density in similar and highly patible packaging solutions. The module integrates 1200 V SiC MOSFET in a half−bridge configuration. To enhance reliability and thermal performance, sintering technology is...
NVVR26A120M1WSS Key Features
- Ultra Low RDS(on)
- Aluminum Nitride Isolator
- Ultra-low Stray Inductance ~ 7.1 nH
- Tvj.Max = 175°C for Continuous Operation
- Automotive Grade SiC MOSFET Chip Technologies
- Sintered Die Technology for High Reliability Performance
- Automotive Module AQG324 pliant
- PPAP Capable