NVVR26A120M1WSS - SiC Module

Product Overview

ON Semiconductor

Datasheet Details

Part number	NVVR26A120M1WSS
Manufacturer	ON Semiconductor
File Size	608.08 KB
Description	SiC Module
Datasheet	NVVR26A120M1WSS Datasheet
Additional preview pages of the NVVR26A120M1WSS datasheet.

Product details

Description

The NVVR26A120M1WSS is part of the EliteSiC power module for traction inverter, a revolutionary high mobility compound semiconductor product family that offers increased performance, better efficiency, and higher power density in similar and highly compatible packaging solutions.The module integrates 1200 V SiC MOSFET in a half bridge configuration.

Features

Ultra Low RDS(on).
Aluminum Nitride Isolator.
Ultra.
low Stray Inductance ~ 7.1 nH.
Tvj. Max = 175°C for Continuous Operation.
Automotive Grade SiC MOSFET Chip Technologies.
Sintered Die Technology for High Reliability Performance.
Automotive Module AQG324 Compliant.
PPAP Capable.

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