NVVR26A120M1WSS Overview
Key Features
- Ultra Low RDS(on)
- Aluminum Nitride Isolator
- Ultra-low Stray Inductance ~ 7.1 nH
- = 175°C for Continuous Operation
- Automotive Grade SiC MOSFET Chip Technologies
- Sintered Die Technology for High Reliability Performance
- Automotive Module AQG324 Compliant
- PPAP Capable
