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Silicon Carbide (SiC) Module – EliteSiC Power Module for OBC, 80 mohm, 1200 V, 20 A, Vienna Rectifier, in APM32 Series
NVXK2KR80WDT
Features
• DIP Silicon Carbide Vienna Rectifier Power Module for On−board
Charger (OBC) for xEV Applications
• Creepage and Clearance per IEC60664−1, IEC 60950−1 • Compact Design for Low Total Module Resistance • Module Serialization for Full Traceability • Lead Free, ROHS and UL94V−0 Compliant • Automotive Qualified per AEC−Q101 and AQG324
Typical Applications
• Vienna PFC for On−Board Charger in xEV Applications
MAXIMUM RATINGS MOSFET (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Recommended Operation Values of Gate−to−Source Voltage, TJ ≤ 175°C
Continuous Drain Current (Notes1, 2)
TC
NVXK2KR80WDT Datasheet
