Datasheet Summary
SiC Power MOSFET Module
1200 V, 80 mW, 31 A Full Bridge Power Module
Features
- DIP Silicon Carbide Full Bridge Power Module for On- Board
Charger (OBC) for xEV Applications
- Creepage and Clearance per IEC60664- 1, IEC 60950- 1
- pact Design for Low Total Module Resistance
- Module Serialization for Full Traceability
- Lead Free, ROHS and UL94V- 0 pliant
- Automotive Qualified per AEC- Q101 and AQG324
Typical Applications
- DC- DC and On- Board Charger in xEV Applications
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Remended Operation Values of Gate- to- Source Voltage, TJ ≤...