Datasheet Summary
Silicon Carbide (SiC) Module
- EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC
The NXH004P120M3F2PTNG is a power module containing 3 mW / 1200 V SiC MOSFET half- bridge and a thermistor with Si3N4 DBC in an F2 package.
Features
- 4 mW / 1200 V M3S SiC MOSFET Half- Bridge
- Si3N4 DBC
- Thermistor
- Pre- Applied Thermal Interface Material (TIM)
- Press- Fit Pins
- These Devices are Pb- Free, Halide Free and are RoHS pliant
Typical Applications
- Solar Inverter
- Uninterruptible Power Supplies
- Electric Vehicle Charging Stations
- Industrial Power
DATA SHEET .onsemi.
PACKAGE PICTURE
PIM36 56.7x42.5 (PRESS FIT) CASE...