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NXH004P120M3F2PTNG - SiC

General Description

See detailed ordering and shipping information on page 4 of this data sheet.

Rev.

Key Features

  • 4 mW / 1200 V M3S SiC MOSFET Half.
  • Bridge.
  • Si3N4 DBC.
  • Thermistor.
  • Pre.
  • Applied Thermal Interface Material (TIM).
  • Press.
  • Fit Pins.
  • These Devices are Pb.
  • Free, Halide Free and are RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC NXH004P120M3F2PTNG The NXH004P120M3F2PTNG is a power module containing 3 mW / 1200 V SiC MOSFET half−bridge and a thermistor with Si3N4 DBC in an F2 package. Features • 4 mW / 1200 V M3S SiC MOSFET Half−Bridge • Si3N4 DBC • Thermistor • Pre−Applied Thermal Interface Material (TIM) • Press−Fit Pins • These Devices are Pb−Free, Halide Free and are RoHS Compliant Typical Applications • Solar Inverter • Uninterruptible Power Supplies • Electric Vehicle Charging Stations • Industrial Power DATA SHEET www.onsemi.com PACKAGE PICTURE PIM36 56.7x42.