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NXH004P120M3F2PTNG Datasheet Sic

Manufacturer: onsemi

Overview: Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC NXH004P120M3F2PTNG The NXH004P120M3F2PTNG is a power module containing 3 mW / 1200 V SiC MOSFET half−bridge and a thermistor with Si3N4 DBC in an F2 package.

General Description

for pin names ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet.

© Semiconductor Components Industries, LLC, 2023 1 July, 2023 − Rev.

0 Publication Order Number: NXH004P120M3F2PTNG/D NXH004P120M3F2PTNG PIN FUNCTION DESCRIPTION Pin Name 1 S1 2 G1 3 G1 4 S1 5 DC+ 6 DC+ 7 DC+ 8 DC+ 9 DC+ 10 DC+ 11 DC+ 12 DC+ 13 DC* 14 DC− 15 DC− 16 DC− 17 DC− 18 DC− 19 DC− 20 DC− 21 PHASE 22 PHASE 23 PHASE 24 PHASE 25 PHASE 26 S2 27 G2 28 TH1 29 TH2 30 S2 31 G2 32 PHASE 33 PHASE 34 PHASE 35 PHASE 36 PHASE Q1 Kelvin Emitter (High side switch) Q1 Gate (High side switch) Q1 Gate (High side switch) Q1 Kelvin Emitter (High side switch) DC Positive Bus connection DC Positive Bus connection DC Positive Bus connection DC Positive Bus connection DC Positive Bus connection DC Positive Bus connection DC Positive Bus connection DC Positive Bus connection DC Negative Bus connection DC Negative Bus connection DC Negative Bus connection DC Negative

Key Features

  • 4 mW / 1200 V M3S SiC MOSFET Half.
  • Bridge.
  • Si3N4 DBC.
  • Thermistor.
  • Pre.
  • Applied Thermal Interface Material (TIM).
  • Press.
  • Fit Pins.
  • These Devices are Pb.
  • Free, Halide Free and are RoHS Compliant Typical.

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