NXH100B120H3Q0 Description
The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
NXH100B120H3Q0 Key Features
- 1200 V Ultra Field Stop IGBTs
- Low Reverse Recovery and Fast Switching SiC Diodes
- 1600 V Bypass and Anti-parallel Diodes
- Low Inductive Layout
- Solderable Pins or Press-Fit Pins
- Thermistor
- Options with Pre-Applied Thermal Interface Material (TIM) and