Part NXH100B120H3Q0PG-R
Description Si/SiC Hybrid Module
Manufacturer onsemi
Size 1.47 MB
onsemi

NXH100B120H3Q0PG-R Overview

Key Features

  • 1200 V Ultra Field Stop IGBTs
  • Low Reverse Recovery and Fast Switching SiC Diodes
  • 1600 V Bypass and Anti-parallel Diodes
  • Low Inductive Layout
  • Solderable Pins or Press-Fit Pins
  • Options with Pre-Applied Thermal Interface Material (TIM) and Without Pre-Applied TIM