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NXH100B120H3Q0PG-R - Si/SiC Hybrid Module

Download the NXH100B120H3Q0PG-R datasheet PDF. This datasheet also covers the NXH100B120H3Q0 variant, as both devices belong to the same si/sic hybrid module family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (NXH100B120H3Q0-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

Si/SiC Hybrid Modules – EliteSiC, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode, Q0 Package NXH100B120H3Q0, NXH100B120H3Q0PG-R The NXH100B120H3Q0 is a power module containing a dual boost stage.

The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

Key Features

  • 1200 V Ultra Field Stop IGBTs.
  • Low Reverse Recovery and Fast Switching SiC Diodes.
  • 1600 V Bypass and Anti.
  • parallel Diodes.
  • Low Inductive Layout.
  • Solderable Pins or Press.
  • Fit Pins.
  • Thermistor.
  • Options with Pre.
  • Applied Thermal Interface Material (TIM) and Without Pre.
  • Applied TIM Typical.

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