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NXH40B120MNQ0SNG - Dual Boost Power Module

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General Description

boost stage.

The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

Overview

Dual Boost Power Module NXH40B120MNQ0SNG.

Key Features

  • 1200 V, 40 mW SiC MOSFETs.
  • Low Reverse Recovery and Fast Switching SiC Diodes.
  • 1200 V Bypass and Anti.
  • parallel Diodes.
  • Low Inductive Layout.
  • Solder Pins.
  • Thermistor.
  • These Device is Pb.
  • Free, Halogen Free and is RoHS Compliant Typical.

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