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NXH40B120MNQ1SNG - Three Channel Full SiC

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Overview

Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V + 40 A, 1200 V SiC Diode, Three Channel Full SiC Boost, Q1 Package Product Preview NXH40B120MNQ1SNG The NXH40B120MNQ1SNG is a power module containing a three channel boost stage.

The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

Key Features

  • 1200 V 40 mW SiC MOSFETs.
  • Low Reverse Recovery and Fast Switching SiC Diodes.
  • 1200 V Bypass and Anti.
  • parallel Diodes.
  • Low Inductive Layout.
  • Solderable Pins.
  • Thermistor.
  • This Device is Pb.
  • Free, Halogen Free/BFR Free and is RoHS Compliant Typical.

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