NXH40B120MNQ1SNG Description
The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
NXH40B120MNQ1SNG Key Features
- 1200 V 40 mW SiC MOSFETs
- Low Reverse Recovery and Fast Switching SiC Diodes
- 1200 V Bypass and Anti-parallel Diodes
- Low Inductive Layout
- Solderable Pins
- Thermistor
- This Device is Pb-Free, Halogen Free/BFR Free and is RoHS