NXH40B120MNQ1SNG
NXH40B120MNQ1SNG is Three Channel Full SiC manufactured by onsemi.
Silicon Carbide (SiC) Module
- EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V + 40 A, 1200 V SiC Diode, Three Channel Full SiC Boost, Q1 Package
Product Preview NXH40B120MNQ1SNG
The NXH40B120MNQ1SNG is a power module containing a three channel boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
Features
- 1200 V 40 mW SiC MOSFETs
- Low Reverse Recovery and Fast Switching SiC Diodes
- 1200 V Bypass and Anti- parallel Diodes
- Low Inductive Layout
- Solderable Pins
- Thermistor
- This Device is Pb- Free, Halogen Free/BFR Free and is RoHS pliant
Typical Applications
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