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NZF220TT1 Datasheet Emi Filter With Esd Protection

Manufacturer: onsemi

Overview: NZF220TT1 EMI Filter with ESD Protection.

General Description

2 3 ORDERING INFORMATION Device NZF220TT1 Package SC–75 Shipping 3000/Tape & Reel © Semiconductor Components Industries, LLC, 2002 1 May, 2002 – Rev.

2 Publication Order Number: NZF220TT1/D NZF220TT1 ELECTRICAL CHARACTERISTICS Symbol VZ Ir VF Capacitance Capacitance Resistor FC (Note 2) Characteristic Zener Breakdown Voltage, @ IZT = 1 mA Zener Leakage Current, @ VR = 3 V Zener Forward Voltage, @ IF = 50 mA Zener Internal Capacitance, @ 0 V Bias Zener/Resistor Array Line Capacitance Resistance Cutoff Frequency Min 6.0 N/A N/A 7.0 17.6 90 – Typ – – – – – – 220 Max 8.0 1.0 1.25 10 26.4 110 – Unit V mA V pF pF W MHz 2.

50 W Source and 50 W Lead Termination per Figure 2 Applications Information Suppressing Noise at the Source • Filter all I/O signals leaving the noisy environment • Locate I/O driver circuits close to the connector • Use the longest rise/fall times possible for all digital signals Reducing Noise at the Receiver • Filter all I/O signals entering the unit • Locate the I/O filters as close as possible to the connector Minimizing Noise C

Key Features

  • EMI/RFI Bi.
  • directional “Pi” Low.
  • Pass Filters ESD Protection Meets IEC61000.
  • 4.
  • 2 Diode Capacitance: 7.
  • 10 pF Zener/Resistor Line Capacitance: 22 ±20% pF Low Zener Diode Leakage: 1 mA Maximum Zener Breakdown Voltage; 6.
  • 8 Volts http://onsemi. com Benefits:.
  • Designed to suppress EMI/RFI Noise in Systems Subjected to.
  • Small Package Size Minimizes Parasitic Inductance, T.

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