PCP1208 - Bipolar Transistor

onsemi

Key Features

VCEO=200V, IC=0.7A.
High allowable power dissipation.
Halogen free compliance.
Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ. )@IC=0.35A.
High-speed switching tf=70ns(typ. )@IC=0.3A Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current VCBO VCEO VEBO IC ICP IB Collector Dissipa.

PCP1208 bipolar transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	PCP1208
Manufacturer	onsemi
File Size	232.62 KB
Description	Bipolar Transistor
Datasheet	PCP1208 Datasheet

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Full PDF Text Transcription (Reference)

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Ordering number : ENA1836B PCP1208 Bipolar Transistor 200V, 0.7A Low VCE(sat) NPN Single PCP http://onsemi.com Features • VCEO=200V, IC=0.7A • High allowable power dissipation • Halogen free compliance • Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A • High-speed switching tf=70ns(typ.)@IC=0.3A Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current VCBO VCEO VEBO IC ICP IB Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions When mounted on ceramic substrate (450mm2×0.8mm) Tc=25°C Ratings 220 200 8 0.7 2 140 1.3 3.