PCP1201
Overview
- Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation.
| Part | PCP1201 |
|---|---|
| Description | NPN Epitaxial Planar Silicon Transistor |
| Category | Transistor |
| Manufacturer | SANYO |
| Size | 111.87 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| PCP1208 | onsemi | Bipolar Transistor |
| PCP1203 | onsemi | Bipolar Transistor |