The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PZTA92T1G, NSVPZTA92T1G
High Voltage Transistor
PNP Silicon
Features
• Complement to PZTA42T1G • NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Total Power Dissipation
up to @ TA = 25°C (Note 1)
VCEO VCBO VEBO
IC PD
−300 −300 −5.0 −500
1.5
Vdc Vdc Vdc mAdc W
Storage Temperature Range
Tstg − 65 to +150
°C
Junction Temperature
TJ 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.