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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by PZTA92T1/D
High Voltage Transistor
PNP Silicon
COLLECTOR 2,4 BASE 1 EMITTER 3
PZTA92T1
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Total Power Dissipation up to TA = 25°C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value – 300 –300 – 5.0 – 500 1.5 – 65 to +150 150 Unit Vdc Vdc Vdc mAdc Watts °C °C
SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
4
1
2 3
CASE 318E–04, STYLE 1 TO–261AA
DEVICE MARKING
P2D
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance from Junction to Ambient(1) Symbol RθJA Max 83.3
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PZTA92T1 Datasheet
