Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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High Voltage Transistor
PNP Silicon
COLLECTOR 2,4 BASE 1 EMITTER 3
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current Total Power Dissipation up to TA = 25°C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value
- 300
- 300
- 5.0
- 500 1.5
- 65 to +150 150 Unit Vdc Vdc Vdc mAdc Watts °C °C
SOT- 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
2 3
CASE 318E- 04, STYLE 1 TO- 261AA
DEVICE MARKING
P2D
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance from...
