RB520S30T1G
RB520S30T1G is Schottky Barrier Diode manufactured by onsemi.
Features
- Extremely Fast Switching Speed
- Extremely Low Forward Voltage 0.6 V (max) @ IF = 200 m A
- Low Reverse Current
- ESD Rating: Class 3B per Human Body Model
Class C per Machine Model
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
Vdc
Forward Current DC
200 m A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR- 5 Board, (Note 1) TA = 25C Derate above 25C
200 m W
1.57 m W/C
Thermal Resistance, Junction- to- Ambient
Junction and Storage Temperature Range
Non- Repetitive Peak Forward Current, tp < 10 msec
Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66%
Rq JA TJ, Tstg
IFSM
IFRM
- 55 to +150
C/W C m A m A
Thermal Resistance, Junction- to-...