RB521S30T5 Datasheet | onsemi

RB521S30T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. - Extremely Fast Switching Speed - Extremely Low Forward Voltage 0.5 V (max) @ IF = 200 m A - Low Reverse Current MAXIMUM RATINGS Rating Reverse Voltage Forward Current DC ESD Rating: Class 1C per Human Body Model ESD Rating: Class C per Machine Model Symbol VR IF Value 30 200 Unit Vdc m A http://onsemi. 30 V SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction- to- Ambient Junction and Storage Temperature Range 1. FR- 5 Minimum Pad Symbol PD Max 200 1.57 Rq JA TJ, Tstg 635 - 55 to +125 Unit m W m W/°C °C/W °C 1 2 SOD- 523 CASE 502 PLASTIC MARKING DIAGRAM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Leakage (VR = 10 V) Forward Voltage (IF = 200 m A) Symbol IR VF Min - - Typ - - Max 30.0 0.50 Unit m A Vdc 5Md 5M = Specific Device Code d = Date Code ORDERING INFORMATION Device RB521S30T1 RB521S30T5 Package SOD- 523 SOD- 523 Shipping† 4 mm Pitch 3000/Tape & Reel 2 mm Pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor ponents Industries, LLC, 2003 November, 2003 - Rev. 2 Publication Order Number: RB521S30T1/D RB521S30T1 1 IF, FORWARD CURRENT (A) TA = 125°C IR, REVERSE CURRENT (A) TA = 75°C 100m 10m 1m 100µ 10µ 1µ 0 0.1 0.2 TA = - 25°C 0.3 0.4 0.5 0.6 10m 1m 100m 10m 1m 100n 10n 1n 0 5 10 15 20 25 30 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (VOLTS) TA = - 25°C TA = 75°C TA = 25°C TA = 125°C TA = 25°C Figure 1. Forward...