RB751S40
RB751S40 is Schottky Barrier Diode manufactured by onsemi.
Features
- Extremely Fast Switching Speed
- Extremely Low Forward Voltage
- 0.28 V (Typ) @ IF = 1.0 m Adc
- Low Reverse Current
- Lead- Free Plating
- NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Reverse Voltage
Reverse Voltage
Forward Continuous Current (DC)
30 m A
Peak Forward Surge Current
IFSM
500 m A
ESD Rating:
Class 1C per Human Body Model Class A per Machine Model
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board, (Note 1) TA = 25C Derate above 25C
Thermal Resistance, Junction- to- Ambient
Junction and Storage Temperature Range
1. FR- 5 Minimum Pad.
Symbol PD
Rq JA
Max 200 1.57 635
Unit m W m W/C C/W
TJ, Tstg
- 55 to +150 C
DATA SHEET...