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BAW56TT1G, SBAW56TT1G
Dual Switching Diode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C) Rating
Symbol
Max
Unit
Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS
VR 70 Vdc IF 200 mAdc IFM(surge) 500 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation, FR−4 Board (Note 1), TA = 25°C Derated above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient (Note 1)
RθJA
555 °C/W
Total Device Dissipation, FR−4 Board (Note 2), TA = 25°C Derated above 25°C
PD 360 mW
2.
SBAW56TT1G Datasheet
