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SBRS8130LT3G - Schottky Power Rectifier

Datasheet Summary

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount.

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Datasheet preview – SBRS8130LT3G

Datasheet Details

Part number SBRS8130LT3G
Manufacturer ON Semiconductor
File Size 270.90 KB
Description Schottky Power Rectifier
Datasheet download datasheet SBRS8130LT3G Datasheet
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Full PDF Text Transcription

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Schottky Power Rectifier Surface Mount Power Package MBRS130LT3G, SBRS8130LT3G, SBRS8130LN This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Features • Very Low Forward Voltage Drop (0.395 Volts Max @ 1.
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