STD110N02R Datasheet | onsemi

NTD110N02R, STD110N02R MOSFET - Power, N-Channel, DPAK 24 V, 110 A Features - Planar HD3e Process for Fast Switching Performance - Low RDS(on) to Minimize Conduction Loss - Low Ciss to Minimize Driver Loss - Low Gate Charge - Optimized for High Side Switching Requirements in High- Efficiency DC- DC Converters - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are Ro HS pliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain- to- Source Voltage Gate- to- Source Voltage - Continuous Thermal Resistance - Junction- to- Case Total Power Dissipation @ TC = 25°C Drain Current - Continuous @ TC = 25°C, Chip - Continuous @ TC = 25°C Limited by Package - Continuous @ TA = 25°C Limited by Wires - Single Pulse (tp = 10 ms) Thermal Resistance - Junction- to- Ambient (Note 1) - Total Power Dissipation @ TA =...