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NTD110N02R, STD110N02R
MOSFET – Power, N-Channel, DPAK
24 V, 110 A
Features
• Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current
− Continuous @ TC = 25°C, Chip − Continuous @ TC = 25°C Limited by Pac
STD110N02R Datasheet
