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STD5406NT4G - Power MOSFET

Download the STD5406NT4G datasheet PDF. This datasheet also covers the STD5406N variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low RDS(on).
  • High Current Capability.
  • Low Gate Charge.
  • STD Prefix for Automotive and Other.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STD5406N-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTD5406N, STD5406N Power MOSFET 40 V, 70 A, Single N−Channel, DPAK Features • Low RDS(on) • High Current Capability • Low Gate Charge • STD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* • These Devices are Pb−Free and are RoHS Compliant Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current − RqJC Power Dissipation − RqJC Continuous Drain Current − RqJA (Note 1) Steady State Steady State TC = 25°C TC = 125°C TC = 25°C Steady TA = 25°C State TA = 125°C VDSS VGS ID PD ID 40 ±20 70 40 100 12.2 7.