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STD5407NT4G - Power MOSFET

Download the STD5407NT4G datasheet PDF. This datasheet also covers the STD5407N variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low RDS(on).
  • High Current Capability.
  • Low Gate Charge.
  • STD Prefix for Automotive and Other.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STD5407N-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by onsemi

Part Number Description
STD5407N Power MOSFET
STD5406N Power MOSFET
STD5406NT4G Power MOSFET
STD110N02R N-Channel Power MOSFET
STD24N06L N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • Low RDS(on) • High Current Capability • Low Gate Charge • STD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* • These Devices are Pb−Free and are RoHS Compliant Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current − RqJC Steady TC = 25°C State TC = 100°C ID 38 A 27 Power Dissipation − RqJC Steady State TC = 25°C PD 75 W Continuous Drain Current RqJA (Note 1) Steady TA = 25°C State TA = 100°C ID 7.