TIG056BF - N-Channel IGBT

onsemi

Key Features

Low-saturation voltage.
Ultrahigh speed switching.
Enhansment type.
Protection diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (Pulse) Allowable Power Dissipation Channel Temperature VCES VGES ICP PD Tch Storage Temperature Tstg Conditions VGE=15V, CM=2000μF Tc=25°C Ratings 430 ±33 240 30 150 -55 to +150 Unit V V A W °C °C Stresses exceeding Maximum.

TIG056BF n-channel igbt by onsemi - Datasheet Preview

Datasheet Details

Part number	TIG056BF
Manufacturer	onsemi
File Size	157.97 KB
Description	N-Channel IGBT
Datasheet	TIG056BF Datasheet

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Full PDF Text Transcription (Reference)

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Ordering number : ENA1775B TIG056BF N-Channel IGBT 430V, 240A, VCE(sat); 3.6V TO-220F-3FS http://onsemi.com Features • Low-saturation voltage • Ultrahigh speed switching • Enhansment type • Protection diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (Pulse) Allowable Power Dissipation Channel Temperature VCES VGES ICP PD Tch Storage Temperature Tstg Conditions VGE=15V, CM=2000μF Tc=25°C Ratings 430 ±33 240 30 150 -55 to +150 Unit V V A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.