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TIG056BF - N-Channel IGBT

Datasheet Summary

Features

  • Low-saturation voltage.
  • Ultrahigh speed switching.
  • Enhansment type.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (Pulse) Allowable Power Dissipation Channel Temperature VCES VGES ICP PD Tch Storage Temperature Tstg Conditions VGE=15V, CM=2000μF Tc=25°C Ratings 430 ±33 240 30 150 -55 to +150 Unit V V A W °C °C Stresses exceeding Maximum.

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Datasheet Details

Part number TIG056BF
Manufacturer ON Semiconductor
File Size 157.97 KB
Description N-Channel IGBT
Datasheet download datasheet TIG056BF Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1775B TIG056BF N-Channel IGBT 430V, 240A, VCE(sat); 3.6V TO-220F-3FS http://onsemi.com Features • Low-saturation voltage • Ultrahigh speed switching • Enhansment type • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (Pulse) Allowable Power Dissipation Channel Temperature VCES VGES ICP PD Tch Storage Temperature Tstg Conditions VGE=15V, CM=2000μF Tc=25°C Ratings 430 ±33 240 30 150 -55 to +150 Unit V V A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
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