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TIG056BF - N-Channel IGBT

Key Features

  • N-Channel IGBT High Power High Speed Switching.

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📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo TIG056BF N-Channel IGBT ON Semiconductor

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : ENA1775A TIG056BF SANYO Semiconductors DATA SHEET TIG056BF Features • • • N-Channel IGBT High Power High Speed Switching Applications Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage Collector Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VCES VGES ICP PC Tch Tstg VGE=15V, CM=2000μF Tc=25°C Conditions Ratings 400 ±33 240 30 150 -55 to +150 Unit V V A W °C °C Package Dimensions unit : mm (typ) 7509-005 10.0 3.2 3.5 7.2 4.5 2.8 Product & Package Information • Package : TO-220FI(LS) • JEITA, JEDEC : SC-67, SOT-186A, TO-220F • Minimum Packing Quantity : 100 pcs./bag, 50 pcs.