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TIP102 - Silicon NPN Transistor

Download the TIP102 datasheet PDF. This datasheet also covers the TIP100 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High DC Current Gain.
  • hFE = 2500 (Typ) @ IC = 4.0 Adc.
  • Collector.
  • Emitter Sustaining Voltage.
  • @ 30 mAdc VCEO(sus) = 60 Vdc (Min).
  • TIP100, TIP105 = 80 Vdc (Min).
  • TIP101, TIP106 = 100 Vdc (Min).
  • TIP102, TIP107.
  • Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 2.5 Vdc (Max) @ IC = 8.0 Adc.
  • Monolithic Construction with Built.
  • in Base.
  • Emitter Shun.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TIP100-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TIP102
Manufacturer onsemi
File Size 274.78 KB
Description Silicon NPN Transistor
Datasheet download datasheet TIP102 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Complementary Silicon Transistors, Plastic, Medium-Power TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105 = 80 Vdc (Min) − TIP101, TIP106 = 100 Vdc (Min) − TIP102, TIP107 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 2.5 Vdc (Max) @ IC = 8.0 Adc • Monolithic Construction with Built−in Base−Emitter Shunt Resistors • These Devices are Pb−Free and are RoHS Compliant DATA SHEET www.onsemi.com 4 1 2 3 1. Base 2. Collector 3. Emitter 4.