Datasheet4U Logo Datasheet4U.com

TND027SW - Excellent Power Device

General Description

The output power MOSFET will be turned on when the input voltage exceeds the input threshold voltage (4 to 6V is recommended), and then the lamp will be turned on by the current flowing to the lamp.

Key Features

  • N-channel MOSFET built in.
  • Halogen free compliance.
  • Overheat protection (Self recovery type).
  • Overcurrent protection (Self recovery type current limiting function).
  • Overvoltage protection.
  • Incorporates two sets of circuit Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Output Current Input Voltage Symbol VDS IO(DC) VIN Allowable Power Dissipation PD Operating Supply Voltage Operating Temperatu.

📥 Download Datasheet

Datasheet Details

Part number TND027SW
Manufacturer onsemi
File Size 273.73 KB
Description Excellent Power Device
Datasheet download datasheet TND027SW Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TND027SW Excellent Power Device Sanyo Semicon Device
TND027MP Excellent Power Device Sanyo Semicon Device
TND027TD Excellent Power Device Sanyo Semicon Device
TND020F Lamp-/ solenoid-/ and motor-driving Applications Sanyo Semicon Device
TND020MP Lamp-/ solenoid-/ and motor-driving Applications Sanyo Semicon Device

Other Datasheets by onsemi

Part Number Description
TND301 Clock Management Design Using Low Skew and Low Jitter Devices
TND306 High-Speed CMOS Product Designation Definitions
TND307 Graphical Data Test Circuits
TND308 Graphical Data Test Circuits
TND314S Excellent Power Device

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : EN7437D TND027SW Excellent Power Device Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving, Dual SOIC8 http://onsemi.com Features • N-channel MOSFET built in • Halogen free compliance • Overheat protection (Self recovery type) • Overcurrent protection (Self recovery type current limiting function) • Overvoltage protection • Incorporates two sets of circuit Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Output Current Input Voltage Symbol VDS IO(DC) VIN Allowable Power Dissipation PD Operating Supply Voltage Operating Temperature Junction Temperature Storage Temperature VDS(opr) Topr Tj Tstg Conditions When mounted on ceramic substrate (1200mm2×0.8mm) 1unit When mounted on ceramic substrate (1200mm2×0.