Datasheet4U Logo Datasheet4U.com

TND027SW - Excellent Power Device

Description

The output power MOSFET will be turned on when the input voltage exceeds the input threshold voltage (4 to 6V is recommended), and then the lamp will be turned on by the current flowing to the lamp.

Features

  • ExPD(Excellent Power Device) Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving.

📥 Download Datasheet

Datasheet preview – TND027SW

Datasheet Details

Part number TND027SW
Manufacturer Sanyo Semicon Device
File Size 440.59 KB
Description Excellent Power Device
Datasheet download datasheet TND027SW Datasheet
Additional preview pages of the TND027SW datasheet.
Other Datasheets by Sanyo Semicon Device

Full PDF Text Transcription

Click to expand full text
www.DataSheet.co.kr Ordering number : EN7437C TND027SW SANYO Semiconductors DATA SHEET TND027SW Features • • • • • ExPD(Excellent Power Device) Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving Applications N-channel MOSFET built in Overheat protection (Self recovery type) Overcurrent protection (Self recovery type current limiting function) Overvoltage protection Incorporates two sets of circuit Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Output Current Input Voltage Allowable Power Dissipation Operating Supply Voltage Operating Temperature Junction Temperature Storage Temperature Symbol VDS IO(DC) VIN PD VDS(opr) Topr Tj Tstg When mounted on ceramic substrate (1200mm2×0.8mm) Iunit When mounted on ceramic substrate (1200mm2×0.
Published: |