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UF3C065040K3S Datasheet Sic Cascode JFET

Manufacturer: onsemi

Overview: Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 650 V, 42.

General Description

onsemi’s cascode products co-package its high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings.

These devices are excellent for switching inductive loads when used with remended RC-snubbers, and any application requiring standard gate drive.

Key Features

  • Typical On-resistance RDS(on),typ of 42 mW.
  • Maximum Operating Temperature of 175 C.
  • Excellent Reverse Recovery.
  • Low Gate Charge.
  • Low Intrinsic Capacitance.
  • ESD Protected, HBM Class 2.
  • Very Low Switching Losses (required RC-snubber loss negligible under typical operating conditions).
  • This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

UF3C065040K3S from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
UnitedSiC Logo UF3C065040K3S MOSFET UnitedSiC

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