UF3C065040K3S - SiC Cascode JFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	UF3C065040K3S
Manufacturer	ON Semiconductor
File Size	420.13 KB
Description	SiC Cascode JFET
Datasheet	UF3C065040K3S Datasheet
Additional preview pages of the UF3C065040K3S datasheet.

Product details

Description

onsemi’s cascode products co-package its high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings.These devices are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.

Features

Typical On-resistance RDS(on),typ of 42 mW.
Maximum Operating Temperature of 175 C.
Excellent Reverse Recovery.
Low Gate Charge.
Low Intrinsic Capacitance.
ESD Protected, HBM Class 2.
Very Low Switching Losses (required RC-snubber loss negligible under typical operating conditions).
This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

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Published: Apr 14, 2025 |