UF3C065040K3S Description
onsemi’s cascode products co-package its high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with remended RC-snubbers, and any application...
UF3C065040K3S Key Features
- Typical On-resistance RDS(on),typ of 42 mW
- Maximum Operating Temperature of 175 C
- Excellent Reverse Recovery
- Low Gate Charge
- Low Intrinsic Capacitance
- ESD Protected, HBM Class 2
- Very Low Switching Losses (required RC-snubber loss negligible
- This Device is Pb-Free, Halogen Free and is RoHS pliant