Datasheet4U Logo Datasheet4U.com

UF3C065040K3S - SiC Cascode JFET

General Description

SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

Key Features

  • Typical On-resistance RDS(on),typ of 42 mW.
  • Maximum Operating Temperature of 175 C.
  • Excellent Reverse Recovery.
  • Low Gate Charge.
  • Low Intrinsic Capacitance.
  • ESD Protected, HBM Class 2.
  • Very Low Switching Losses (required RC-snubber loss negligible under typical operating conditions).
  • This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 650 V, 42 mohm UF3C065040K3S Description onsemi’s cascode products co-package its high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.