UF3C065040K3S
UF3C065040K3S is MOSFET manufactured by UnitedSiC.
Description
United Silicon Carbide's cascode products co-package its highperformance G3 Si C JFETs with a cascode optimized MOSFET to produce the only standard gate drive Si C device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with remended RCsnubbers, and any application requiring standard gate drive.
CASE 123
G (1)
CASE D (2)
S (3)
Features w Typical on-resistance RDS(on),typ of 42m W w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w
Very low switching losses (required RC-snubber loss negligible under typical operating conditions)
Part Number UF3C065040K3S
Package TO-247-3L
Marking UF3C065040K3S
Typical Applications w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating
Maximum Ratings
Parameter
Drain-source voltage Gate-source voltage
Continuous drain current 1
Pulsed drain current 2 Single pulsed avalanche energy 3 Power dissipation Maximum junction temperature Operating and storage temperature Max. lead temperature for soldering, 1/8” from case for 5 seconds
1 Limited by TJ,max 2 Pulse width tp limited by TJ,max 3 Starting TJ = 25°C
Symbol VDS VGS
IDM EAS Ptot TJ,max TJ, TSTG
Test Conditions
DC TC=25°C TC=100°C TC=25°C L=15m H, IAS=3.19A TC=25°C
Value 650 -25 to +25 54 40 125 76 326 175 -55 to 175
Units V V A A A m J W °C °C
°C
Rev. A, December 2018
1 For more information go to .unitedsic..
42m W
- 650V Si C Cascode | UF3C065040K3S
Electrical Characteristics (TJ = +25°C unless otherwise specified)
Typical Performance
- Static
Parameter Drain-source breakdown voltage
Total drain leakage current
Total gate leakage current
Drain-source on-resistance
Gate threshold voltage Gate...
