UJ4C075044B7S Description
The UJ4C075044B7S is a 750 V, 44 mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.
UJ4C075044B7S Key Features
- On-resistance RDS(on): 44 mW (Typ)
- Operating Temperature: 175 °C (Max)
- Excellent Reverse Recovery: Qrr = 55 nC
- Low Body Diode VFSD: 1.2 V
- Low Gate Charge: QG = 37.8 nC
- Threshold Voltage VG(th): 4.8 V (Typ) Allowing 0 to 15 V Drive
- Low Intrinsic Capacitance
- ESD Protected: HBM Class 2 and CDM Class C3
- TO-263-7 Package for Faster Switching, Clean Gate Waveforms
- This Device is Pb-Free, Halogen Free and is RoHS pliant