Datasheet4U Logo Datasheet4U.com

UJ4C075044K4S - SiC Cascode JFET

General Description

The UJ4C075044K4S is a 750 V, 44 mW G4 SiC FET.

a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Key Features

  • On-Resistance RDS(on) : 44 mW (typ).
  • Operating Temperature: 175 C (Max).
  • Excellent Reverse Recovery: Qrr = 72 nC.
  • Low Body Diode VFSD: 1.2 V.
  • Low Gate Charge : QG = 37.8 nC.
  • Threshold Voltage VG(th): 4.8 V (typ) Allowing 0 to 15 V Drive.
  • Low Intrinsic Capacitance.
  • ESD Protected: HBM Class 2 and CDM Class C3.
  • TO247-4 Package for Faster Switching, Clean Gate Waveforms.
  • This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UJ4C075044B7S 750V SiC Cascode JFET Qorvo
UJ4C075044B7S SiC Cascode JFET ON Semiconductor
UJ4C075044L8S SiC FET Qorvo
UJ4C075018K3S SiC Cascode JFET UnitedSiC
UJ4C075018K4S SiC Cascode JFET UnitedSiC

Other Datasheets by onsemi

Part Number Description
UJ4C075044K3S 750V SiC Cascode JFET
UJ4C075018K4S 750V SiC Cascode JFET
UJ4C075060K3S SiC Cascode JFET
UJ4N075005K4S SiC JFET
UJ4SC075006K4S 750V SiC Cascode JFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247-4, 750 V, 44 mohm SiC JFET w/ Si MOSFET UJ4C075044K4S Description The UJ4C075044K4S is a 750 V, 44 mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO247-4 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.