UJ4C075060K3S Description
The UJ4C075060K3S is a 750 V, 58 mW G4 SiC FET. It is based on unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.
UJ4C075060K3S Key Features
- On-Resistance RDS(on) : 58 mW (typ)
- Operating Temperature: 175 C (max)
- Excellent Reverse Recovery: Qrr = 52 nC
- Low Body Diode VFSD: 1.31 V
- Low Gate Charge: QG = 37.8 nC
- Threshold Voltage VG(th): 4.8 V (typ) Allowing 0 to 15 V Drive
- Low Intrinsic Capacitance
- ESD Protected: HBM Class 2
- This Device is Pb-Free, Halogen Free and is RoHS pliant