Click to expand full text
VEC2315
Power MOSFET –60V, 137mΩ, –2.5A, Dual P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
Features Low On-Resistance 4V drive Low-Profile Package ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance
Typical Applications Motor Driver
SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
60 V
Gate to Source Voltage
VGSS
20 V
Drain Current (DC)
ID 2.
VEC2315 Datasheet
