VEC2315 Description
VEC2315 Power MOSFET 60V, 137mΩ, 2.5A, Dual P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
VEC2315 Key Features
- Low On-Resistance
- 4V drive
- Low-Profile Package
- ESD Diode-Protected Gate
- Pb-Free, Halogen Free and RoHS pliance