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WPB4001 - N-Channel Power MOSFET

Features

  • ON-resistance RDS(on)=0.2Ω (typ. ).
  • Input capacitance Ciss=2250pF (typ. ).
  • 10V Drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Source to Drain Diode Forward Current (DC) Source to Drain Diode Forward Current (Pulse) VDSS VGSS ID IDP ISD ISDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single P.

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Datasheet Details

Part number WPB4001
Manufacturer onsemi
File Size 82.83 KB
Description N-Channel Power MOSFET
Datasheet download datasheet WPB4001 Datasheet

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Full PDF Text Transcription

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Ordering number : ENA2212 WPB4001 N-Channel Power MOSFET 500V, 26A, 0.26Ω, TO-3P-3L http://onsemi.com Features • ON-resistance RDS(on)=0.2Ω (typ.) • Input capacitance Ciss=2250pF (typ.) • 10V Drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Source to Drain Diode Forward Current (DC) Source to Drain Diode Forward Current (Pulse) VDSS VGSS ID IDP ISD ISDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 EAS IAV Note :*1 VDD=50V, L=5mH, IAV=14A (Fig.
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