NTB125N02R Description
NTB125N02R, NTP125N02R Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK.
NTB125N02R Key Features
- Planar HD3e Process for Fast Switching Performance
- Body Diode for Low trr and Qrr and Optimized for Synchronous
- Low Ciss to Minimize Driver Loss
- Optimized Qgd and RDS(on) for Shoot-through Protection
- Low Gate Charge
- Pb-Free Packages are Available
- Continuous
- Junction-to-Case Total Power Dissipation @ TC = 25°C Drain Current
- Continuous @ TC = 25°C, Chip Continuous @ TC = 25°C, Limited by Package Continuous @ TA = 25°C, Limited by Wires Single
- Junction-to-Ambient (Note 1)