NTB85N03T4 Datasheet | onsemi

NTP85N03, NTB85N03 Power MOSFET 85 Amps, 28 Volts N- Channel TO- 220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications http://onsemi. - - - - Power Supplies Converters Power Motor Controls Bridge Circuits 85 AMPERES 28 VOLTS RDS(on) = 6.1 m W (Typ.) N- Channel D Value 28 "20 85- 190 80 0.66 - 55 to +150 733 Adc Apk W W/°C °C 1 TO- 220AB CASE 221A Style 5 2 3 Unit Vdc Vdc VGS ID IDM PD TJ, Tstg G 4 S 1 2 3 D2PAK CASE 418AA Style 2 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain- to- Source Voltage Gate- to- Source Voltage - Continuous Drain Current - Continuous @ TC = 25°C - Single Pulse (tp = 10 ms) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS Single Pulse Drain- to- Source Avalanche Energy - Starting TJ = 25°C (VDD = 28 Vdc, VGS = 10 Vdc, L = 5.0 m H, IL(pk) = 17 A, RG = 25 W) Thermal Resistance Junction- to- Case Junction- to- Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds EAS m J MARKING DIAGRAMS & PIN ASSIGNMENTS °C/W Rq JC Rq JA TL 1.55 70 260 °C NTx85N03 LLYWW 1 Gate 2 Drain 3 Source 1 Gate NTx85N03 LLYWW 4 Drain 4 Drain 1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in2). - Chip current capability limited by package. 2 Drain 3 Source NTx85N03 x LL Y WW = Device Code = P or B = Location Code = Year = Work Week ORDERING INFORMATION Device NTP85N03 NTB85N03 NTB85N03T4 Package TO- 220AB D2PAK D2PAK Shipping 50 Units/Rail 50 Units/Rail 800/Tape & Reel © Semiconductor ponents Industries, LLC, 2003 October, 2003 - Rev. 1 Publication Order Number: NTP85N03/D NTP85N03, NTB85N03 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain- to- Source Breakdown Voltage (Note 2) (VGS = 0 Vdc, ID = 250 m Adc) Temperature Coefficient (Positive) Zero Gate Voltage...