NTB90N02T4 Datasheet | onsemi

NTB90N02, NTP90N02 Power MOSFET 90 Amps, 24 Volts N- Channel D2PAK and TO- 220 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications http://onsemi. - - - - Power Supplies Converters Power Motor Controls Bridge Circuits V(BR)DSS RDS(on) TYP 5.0 m W @ 10 V 7.5 m W @ 4.5 V ID MAX 24 V 90 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain- to- Source Voltage Gate- to- Source Voltage - Continuous Drain Current - Continuous @ TA = 25°C - Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Symbol VDSS VGS ID IDM PD TJ, Tstg Value 24 "20 90- 200 85 0.66 - 55 to +150 733 Unit Vdc Vdc 4 4 1 TO- 220AB CASE 221A Style 5 2 3 2 3 D2PAK CASE 418B Style 2 A A W W/°C °C MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain Single Pulse Drain- to- Source Avalanche Energy - Starting TJ = 25°C (VDD = 28 Vdc, VGS = 10 Vdc, L = 5.0 m H, IL(pk) = 17 A, RG = 25 W) Thermal Resistance Junction- to- Case Junction- to- Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds EAS m J NTx90N02 LLYWW °C/W Rq JC Rq JA TL 1.55 70 260 °C 1 Gate NTx90N02 LLYWW 3 Source 2 Drain 1 Gate 2 Drain = Device Code = P or B = Location Code 3 = Year Source = Work Week 1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using minimum remended pad size, (Cu Area 0.412 in2). - Chip current capability limited by package. N- Channel D NTx90N02 x LL Y WW ORDERING INFORMATION Device NTP90N02 NTB90N02 Package TO- 220AB D2PAK D2PAK Shipping† 50 Units/Rail 50 Units/Rail 800/Tape & Reel G NTB90N02T4 S †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor ponents Industries, LLC, 2003 October, 2003 -...